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收起展开封装/外壳 :
6-TSOP(0.065",1.65mm 宽)8-PowerPak® CHIPFET™8-SOIC(0.154",3.90mm 宽)PowerPAK 1212-8PowerPAK® 1212-8PowerPAK® SO-8SC-70,SOT-323SC-74,SOT-457SC-75ATO-236-3,SC-59,SOT-23-3TO-252-3,DPak(2 引线+接片),SC-63TO-261-4,TO-261AATO-263-3,D²Pak(2 引线+接片),TO-263AB
关闭供应商器件封装 :
6-TSOP8-PowerPak® ChipFet8-SOIC ND-PakD2PAKSC-70-3SOT-223SOT-23-3(TO-236)TO-236TO-252,(D-Pak)TO-263(D2Pak)
关闭电流 - 连续漏极 (Id)(25° C 时) :
1.8A10A110A115mA11A12A14A15A185mA190mA2.3A2.7A2.9A240mA3.2A3.6A300mA30A4.1A4.4A4.7A5.1A5.5A5.6A50A55A6.2A6.3A60A6A7.7A8.6A8.8A8A9.6A96A
关闭不同 Id、Vgs 时的 Rds On(最大值) :
1.25 欧姆 @ 500mA,10V100 毫欧 @ 3.2A,10V100 毫欧 @ 8.4A,10V100 毫欧 @ 8.4A,5V11 毫欧 @ 12A,10V115 毫欧 @ 3.9A,10V120 毫欧 @ 3.2A,10V14.5 毫欧 @ 14.4A,10V156 毫欧 @ 1.9A,10V16 毫欧 @ 20A,10V19 毫欧 @ 10A,10V19 毫欧 @ 30A,10V2 欧姆 @ 500mA,10V2.5 欧姆 @ 250mA,10V200 毫欧 @ 1.6A,10V200 毫欧 @ 1.6A,5V200 毫欧 @ 4.6A,10V200 毫欧 @ 4.6A,5V200 毫欧 @ 6A,5V21 毫欧 @ 9.5A,10V216 毫欧 @ 2.2A,10V22 毫欧 @ 10.3A,10V22 毫欧 @ 6A,10V25 毫欧 @ 8.7A,10V280 毫欧 @ 5.3A,10V280 毫欧 @ 6.6A,10V3 欧姆 @ 250mA,10V3.4 毫欧 @ 30A,10V3.9 毫欧 @ 30A,10V34 毫欧 @ 4.6A,10V36 毫欧 @ 4.6A,10V4 欧姆 @ 500mA,10V500 毫欧 @ 1.1A,10V500 毫欧 @ 3.1A,10V58 毫欧 @ 5.4A,10V6 欧姆 @ 500mA,10V6.25 毫欧 @ 10A,10V64 毫欧 @ 5A,10V65 毫欧 @ 5.7A,10V7.4 毫欧 @ 20A,10V7.5 欧姆 @ 500mA,10V7.5 毫欧 @ 20A,10V7.8 毫欧 @ 19.7A,10V8 毫欧 @ 30A,10V82 毫欧 @ 4.5A,10V85 毫欧 @ 6A,10V9.3 毫欧 @ 20A,10V
关闭不同 Vgs 时的栅极电荷 (Qg) :
0.6nC @ 4.5V1.7nC @ 15V115nC @ 10V11nC @ 10V12nC @ 10V135nC @ 10V144nC @ 10V160nC @ 10V18nC @ 5V190nC @ 10V19nC @ 10V20nC @ 10V22nC @ 10V240nC @ 10V25nC @ 10V27nC @ 10V300nC @ 10V32nC @ 10V40nC @ 10V45nC @ 10V57nC @ 10V6.8nC @ 10V70nC @ 10V75nC @ 10V8.4nC @ 5V
关闭不同 Vds 时的输入电容 (Ciss) :
1100pF @ 30V1125pF @ 30V12900pF @ 25V1325pF @ 25V15800pF @ 25V190pF @ 30V21pF @ 5V23pF @ 25V2650pF @ 25V270pF @ 25V2830pF @ 30V300pF @ 25V30pF @ 25V3500pF @ 25V350pF @ 30V370pF @ 25V400pF @ 25V50pF @ 25V570pF @ 25V5800pF @ 25V600pF @ 30V640pF @ 25V665pF @ 15V6900pF @ 30V870pF @ 25V9200pF @ 25V
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